Tao pmp-270-1.rar.doc por descargar Tao pmp-270-1.rar.doc
Tao pmp-270-1.rar.doc por descargar Tao pmp-270-1.rar.doc
Please help
A:
I'd guess it's a web server, not a mobile phone or a computer.
My advice would be to try contacting the provider of the website.
1. Field of the Invention
The present invention relates to a method for forming a thin film on a substrate, and more particularly, to a method for forming a thin film using a metal thin film deposition method.
2. Description of the Related Art
As semiconductor technologies have advanced, techniques for forming ultrafine patterns have developed and various methods are used for forming a pattern in an electronic device. For example, the process of forming a thin film and a pattern includes the process of forming an insulating film, a silicon-containing conductive film, a barrier film and a seed film, and then forming a thin film on the seed film to form a desired pattern.
In the field of semiconductor fabrication, there is a need for forming a thin film with high purity. This is because impurities such as carbon, nitrogen, oxygen and silicon included in the substrate affect the characteristics of the semiconductor device. Furthermore, ultrafine processing has been widely employed in semiconductor device manufacturing processes. A cleaning process for preventing contamination of the process equipment from the thin film, and the maintenance of a high level of cleanliness in a clean room are required. Thus, there is a need for forming a thin film with high purity.
The materials of a thin film to be formed and the method of forming the thin film are determined based on the performance and reliability of a semiconductor device to be manufactured. For example, the material of a thin film is determined depending on the manufacturing process of a semiconductor device.
The impurities that cause the deterioration of characteristics of a semiconductor device are known to be carbon, nitrogen, oxygen, and silicon. Carbon, for example, is a material for forming a high dielectric constant (k) film or a carbon-based metallic film. When a thin film is formed by using such a film as a source material, the carbon impurities in the thin film affect the characteristics of a semiconductor device. In addition, nitrogen and oxygen react with silicon of the substrate to form a silicon nitride film be359ba680
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